SD1530-7 查看數據表（PDF） - Advanced Semiconductor
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SD1530-7 Datasheet PDF : 1 Pages
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ASI SD1530-7
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1530-7 is a Common
Base Device Designed for DME, IFF
and Tacan Pulse Applications.
FEATURES INCLUDE:
• Gold Metalization
• Input Matching
• Broad Band Performance
MAXIMUM RATINGS
IC
2.5 A
VCES
PDISS
TJ
T STG
θ JC
55 V
125 W @ TC = 25 OC
-55 OC to +200 OC
-55 OC to +200 OC
1.4 OC/W
PACKAGE STYLE 250 2L FLG (A)
1 = COLLECTOR 2 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCES
IC = 75 mA
BVEBO
IE = 25 mA
hFE
VCE = 5.0 V
IC = 300 mA
MINIMUM TYPICAL MAXIMUM
55
4.0
10
UNITS
V
V
---
PG
VCC = 50 V Pout = 25 W fo = 960 to 1215 MHz
8.5
10
dB
ηC
PULSE WIDTH = 10 µS
DUTY CYCLE = 1.0%
45
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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