SF25GZ51(2001) 查看數據表（PDF） - Toshiba
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SF25GZ51 Datasheet PDF : 6 Pages
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ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Repetitive Peak Off−State Current and
Repetitive Peak Reverse Current
Peak On−State Voltage
Gate Trigger Voltage
Gate Trigger Current
Holding Current
Critical Rate of Rise of Off−State Voltage
Thermal Resistance
IDRM
IRRM
VTM
VGT
IGT
IH
dv / dt
Rth (j−c)
VDRM = VRRM = Rated
ITM = 80 A
VD = 6 V, RL = 10 Ω
VD = 6 V, ITM = 500 mA
VDRM = Rated, Tc = 125°C
Exponential Rise
Junction to Case
SF25GZ51,SF25JZ51
MIN. TYP. MAX. UNIT
―
―
20
µA
―
―
1.5
V
―
―
1.5
V
―
―
20
mA
―
―
100
mA
―
50
― V / µs
―
―
1.3 °C / W
MARKING
NUMBER
*1
TYPE
SYMBOL
SF25GZ51
SF25JZ51
MARK
F25GZ51
F25JZ51
Example
*2
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-05-10
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