SGR20N40L 查看數據表（PDF） - Fairchild Semiconductor
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SGR20N40L Datasheet PDF : 5 Pages
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Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
C-E Saturation Current
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
* Notes : Recommendation of RG Value : RG≥15Ω
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 1mA, VCE = VGE
IC = 150A, VGE = 4.5V
VGE = 0V, VCE = 30V,
f = 1MHz
VCC = 300V, IC = 150A,
VGE = 4.5V, RG = 15Ω*
Resistive Load
450
--
--
V
--
--
10
µA
--
-- ± 0.1 µA
0.5
1.0
1.4
V
2.0
4.5
8.0
V
-- 3800 --
pF
--
50
--
pF
--
35
--
pF
--
0.2
--
µs
--
1.7
--
µs
--
0.3 0.5
µs
--
1.5 2.0
µs
©2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
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