SIM200D12SV3 查看數據表（PDF） - SemiWell Semiconductor

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SIM200D12SV3

“HALF-BRIDGE” IGBT MODULE

SemiWell Semiconductor 

Preliminary

SIM200D12SV3

Fig 1. Maximum DC Collector Current

vs. Case Temperature

Fig 2. Power Dissipation vs. Case

Temperature

Fig 3. Typ. IGBT Output Characteristics

TJ = 25℃; tp = 80µs

Fig 4. Typ. IGBT Output Characteristics

TJ = 125℃; tp = 80µs

-3-

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