SIM200D12SV3 查看數據表（PDF） - SemiWell Semiconductor

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SIM200D12SV3

“HALF-BRIDGE” IGBT MODULE

SemiWell Semiconductor 

Preliminary

SIM200D12SV3

Fig 5. Typ. Diode Forward Characteristics

tp = 80µs

Fig 6. Typ. Transfer Characteristics

VCE = 50V; tp = 10µs

Fig 7. Typical VCE vs. VGE

TJ = 25℃

-4-

Fig 8. Typical VCE vs. VGE

TJ = 125℃

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