SL04-GS18 查看數據表（PDF） - Vishay Semiconductors
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SL04-GS18 Datasheet PDF : 7 Pages
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SL02 / 03 / 04
Vishay Semiconductors
Parameter
Maximum DC blocking voltage
Test condition
Maximum average forward
rectified current
Peak forward surge current
8.3 ms single half sine-wave
Ttp = 109 °C
Part
Symbol
Value
Unit
SL02
VDC
20
V
SL03
VDC
30
V
SL04
VDC
40
V
IF(AV)
1.1
A
IFSM
40
A
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air2)
RthJA
180
K/W
Maximum operating junction
temperature
TJ
125
°C
Storage temperature range
TSTG
- 55 to 150
°C
2)Mounted on epoxy substrate with 3 x 3 mm Cu pads (≥ 40 μm thick)
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Instaneous forward voltage at
0.51)
Test condition
Typical instantaneous forward 1.1 A
voltage
Maximum DC reverse current at TA = 25 °C
rated DC blocking voltage
TA = 100 °C
TA = 25 °C
TA = 100 °C
TA = 25 °C
TA = 100 °C
1) Pulse test: 300 μs pulse width, 1 % duty cycle
Part
Symbol
Min
Typ.
Max
Unit
SL02
VF
0.360
0.385
V
SL03
VF
SL04
VF
SL02
VF
SL03
VF
SL04
VF
SL02
IR
SL02
IR
SL03
IR
SL03
IR
SL04
IR
SL04
IR
0.395
0.43
V
0.450
0.51
V
0.420
V
0.450
V
0.530
V
250
μA
8.0
mA
130
μA
6.0
mA
20
μA
6.0
mA
www.vishay.com
2
Document Number 85687
Rev. 1.6, 13-Apr-05
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