SPD04N60C2 查看數據表（PDF） - Infineon Technologies
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SPD04N60C2 Datasheet PDF : 11 Pages
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Final data
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity
P-TO251
SPD04N60C2
SPU04N60C2
Product Summary
VDS
600 V
RDS(on) 0.95 Ω
ID
4.5 A
P-TO252
Type
SPD04N60C2
SPU04N60C2
Package
P-TO252
P-TO251
Ordering Code
Q67040-S4307
Q67040-S4306
Marking
04N60C2
04N60C2
Maximum Ratings, at TC = 25°C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=3.6A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=4.5A, VDD=50V
ID puls
EAS
EAR
Avalanche current, repetitive tAR limited by Tjmax
Reverse diode dv/dt
IAR
dv/dt
IS=4.5A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Power dissipation, TC = 25°C
Operating and storage temperature
VGS
Ptot
Tj , Tstg
Value
4.5
2.8
9
130
0.4
4.5
6
±20
50
-55... +150
Unit
A
mJ
A
V/ns
V
W
°C
Page 1
2002-10-07
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