SPD04N60C2 查看數據表（PDF） - Infineon Technologies

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SPD04N60C2

Cool MOS™ Power Transistor

Infineon Technologies 

Final data

SPD04N60C2

SPU04N60C2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Characteristics

Inverse diode continuous

forward current

IS

TC=25°C

-

-

4.5 A

Inverse diode direct current,

ISM

pulsed

-

-

9

Inverse diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Peak rate of fall of reverse

recovery current

VSD

trr

Qrr

Irrm

dirr/dt

VGS=0V, IF=IS

VR=350V, IF=IS ,

diF/dt=100A/µs

-

1 1.2 V

- 900 1530 ns

-

3.2

- µC

-

12

-A

- 440 - A/µs

Typical Transient Thermal Characteristics

Symbol

Value

Unit Symbol

Value

typ.

typ.

Thermal resistance

Thermal capacitance

Rth1

0.039

K/W Cth1

0.00008293

Rth2

0.083

Cth2

0.000282

Rth3

0.101

Cth3

0.0004859

Rth4

0.262

Cth4

0.0006523

Rth5

0.294

Cth5

0.005017

Rth6

0.094

Cth6

0.052

Unit

Ws/K

Ptot (t)

Tj R th1

C th 1

C th 2

Rth,n Tcase External Heatsink

C th,n

Tamb

Page 4

2002-10-07

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