2N0308 查看數據表（PDF） - Infineon Technologies
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2N0308 Datasheet PDF : 8 Pages
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13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 30 A , VDD = 25 V, RGS = 25 Ω
260
mJ
220
200
180
160
140
120
100
80
60
40
20
0
25 45 65 85 105 125 145 °C 185
Tj
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
36 SPU30N03S2-08
V
SPU30N03S2-08
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 30 A pulsed
SPU30N03S2-08
16
V
12
10
0,2 V
DS max
0,8 VDS max
8
6
4
2
0
0
10
20
30
40 nC 55
QGate
34
33
32
31
30
29
28
27
-60 -20 20 60 100 140 °C 200
Tj
Page 7
2003-04-30
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