SST28VF040A-90-4I-PH 查看數據表（PDF） - Silicon Storage Technology

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SST28VF040A-90-4I-PH

4 Mbit (512K x8) SuperFlash EEPROM

Silicon Storage Technology 

4 Mbit SuperFlash EEPROM

SST28SF040A / SST28VF040A

Data Sheet

TABLE 8: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol

Parameter

Minimum

Units

TPU-READ1

TPU-WRITE1

Power-up to Read Operation

Power-up to Write Operation

10

ms

10

ms

T8.4 310

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 9: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

I/O Pin Capacitance

VI/O = 0V

12 pF

CIN1

Input Capacitance

VIN = 0V

6 pF

T9.0 310

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 10: RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification

Units Test Method

NEND1

TDR1

Endurance

Data Retention

10,000

100

Cycles JEDEC Standard A117

Years JEDEC Standard A103

ILTH1

Latch Up

100 + IDD

mA JEDEC Standard 78

T10.7 310

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

©2001 Silicon Storage Technology, Inc.

9

S71077-04-000 6/01 310

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