SST39LF200A 查看數據表（PDF） - Microchip Technology

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SST39LF200A

2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

Microchip Technology 

A Microchip Technology Company

2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash

SST39LF200A / SST39LF400A / SST39LF800A

SST39VF200A / SST39VF400A / SST39VF800A

Data Sheet

SIX-BYTE CODE FOR BLOCK-ERASE

TBE

ADDRESS AMS-0

5555

2AAA

5555

5555

2AAA

BAX

CE#

OE#

WE#

TWP

DQ15-0

XXAA

SW0

XX55

SW1

XX80

SW2

XXAA

SW3

XX55

SW4

XX50

SW5

Note:

This device also supports CE# controlled Block-Erase operation. The WE# and CE# signals are

interchageable as long as minimum timings are met. (See Table 16)

BAX = Block Address

AMS = Most significant address

AMS = A16 for SST39LF/VF200A, A17 for SST39LF/VF400A and A18 for SST39LF/VF800A

X can be VIL or VIH, but no other value.

Figure 11:WE# Controlled Block-Erase Timing Diagram

1117 F17.9

SIX-BYTE CODE FOR SECTOR-ERASE

TSE

ADDRESS AMS-0

5555

2AAA

5555

5555

2AAA

SAX

CE#

OE#

WE#

TWP

DQ15-0

XXAA XX55

XX80

XXAA

XX55

XX30

SW0

SW1

SW2

SW3

SW4

SW5

Note:

This device also supports CE# controlled Sector-Erase operation. The WE# and CE# signals are

interchageable as long as minimum timings are met. (See Table 16)

SAX = Sector Address

AMS = Most significant address

AMS = A16 for SST39LF/VF200A, A17 for SST39LF/VF400A and A18 for SST39LF/VF800A

X can be VIL or VIH, but no other value.

Figure 12:WE# Controlled Sector-Erase Timing Diagram

1117 F18.8

©2011 Silicon Storage Technology, Inc.

21

DS25001A

03/11

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