ST183S04PFK0PBF 查看數據表（PDF） - Vishay Semiconductors
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ST183S04PFK0PBF Datasheet PDF : 9 Pages
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ST183SPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Stud Version), 195 A
250
ST183S Series
200 TJ = 125 °C
150
100
50
I
TM
=
500 A
= 300
A
I
I TM
=
TM
200
A
ITM = 100 A
ITM = 50 A
0
0
20
40
60
80
100
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 9 - Reverse Recovered Charge Characteristics
160
140
120
100
I
TIIMTT=MM==5=021300000A00
A
A
A
I TM
80
60
I TM = 50 A
40
ST183S Series
20
TJ = 125 °C
0
0
20
40
60
80
100
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 10 - Reverse Recovery Current Characteristics
10 000
1000
100
10
1000
1500
400
500
2500
3000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
200 100 50 Hz
10 000
1000
5000
100
ST183S Series
Sinusoidal pulse
tp
TC = 60 °C
1000
10 000
100
10
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
1000
500 400
1500
2500
100 50 Hz
200
3000
5000
ST183S Series
Sinusoidal pulse
tp
TC = 85 °C
100
1000
Pulse Basewidth (µs)
10 000
10 000
1000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
200
VD = 80 % VDRM
500
3000
1500
400
1000
2500
5000
50 Hz
100
100
10 000
10
10
tp
100
ST183S Series
Trapezoidal pulse
TC = 60 °C
dI/dt = 50 A/µs
1000
10 000
10 000
1000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
2500
400
1000
500
1500
3000
100 50 Hz
200
100 5000
10 000
10
10
tp
100
ST183S Series
Trapezoidal pulse
TC = 85 °C
dI/dt = 50 A/µs
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94369
Revision: 30-Apr-08
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