ST183S04PFK0PBF 查看數據表（PDF） - Vishay Semiconductors
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ST183S04PFK0PBF Datasheet PDF : 9 Pages
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ST183SPbF Series
Inverter Grade Thyristors Vishay High Power Products
(Stud Version), 195 A
10 000
1000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
400
1000 500
2500 1500
3000
50 Hz
200
100
10 000
1000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
1000
500 400
50 Hz
200 100
2500 1500
5000
100
10 000
10
10
tp
100
ST183S Series
Trapezoidal pulse
TC = 60 °C
dI/dt = 100 A/µs
1000
10 000
3000
100
5000
10 000
ST183S Series
Trapezoidal pulse
tp
TC = 85 °C
dI/dt = 100 A/µs
10
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
100 000
10 000
1000
100
10
10
20 joules per pulse
100 000
10 000
ST183S Series
Rectangular pulse
tp dI/dt = 50 A/µs
20 joules per pulse
1 25
10
0.5
0.3
0.2
0.1
ST183S Series
Sinusoidal pulse
tp
100
1000
10 000
1000
100
0.3
0.5
0.2
0.1
5 10
12
10
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
10
tr ≤ 1 µs
(a)
(b)
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
1
0.1
0.001
VGD
IGD
0.01
Device: ST183S Series
0.1
1
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
(1) (2) (3) (4)
Frequency limited by PG(AV)
10
100
Document Number: 94369
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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