ST2600C20R3 查看數據表（PDF） - International Rectifier
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ST2600C20R3 Datasheet PDF : 6 Pages
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ST2600C..R Series
Bulletin I25199 rev. B 02/00
Blocking
Parameter
dv/dt Maximum linear rate of rise of
off-state voltage
IRRM Max. peak reverse and off-state
I
leakage current
DRM
ST2600C..R
500
250
Units Conditions
V/µs TJ = TJ max. to 67% rated VDRM
mA TJ = 125°C rated VDRM/VRRM applied
Triggering
Parameter
PGM
PG(AV)
IGM
VGM
-V G M
IGT
Maximum peak gate power
Maximum average gate power
Max. peak positive gate current
Max. peak positive gate voltage
Max. peak negative gate voltage
Maximum DC gate current
required to trigger
VGT Maximum gate voltage required
to trigger
VGD DC gate voltage not to trigger
ST2600C..R
150
10
30
30
0.25
400
4
0.25
Units Conditions
tp = 100µs
W
A Anode positive with respect to cathode
V Anode positive with respect to cathode
V Anode negative with respect to cathode
mA TC = 25°C, VDRM = 5V
V
TC = 25°C, VDRM = 5V
V TC = 125°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Thermal and Mechanical Specification
Parameter
ST2600C..R Units Conditions
TJ max. Max. operating temperature
Tstg Max. storage temperature range
R
Thermal resistance, junction
thJ-C
to case
125
-55 to 125
0.019
0.0095
On-state (conducting)
°C
DC operation single side cooled
K/W DC operation double side cooled
Rth(C-h) Thermal resistance, case
to heatsink
F
Mounting force ± 10%
wt
Approximate weight
0.004
0.002
43000
(4400)
1600
K/W Single side cooled Clamping force 43KN with
Double side cooled mounting compound
N
(Kg)
g
Case style
(R-PUK)
See Outline Table
∆RthJ-C Conduction
(The following table shows the increment of thermal resistence R when devices operate at different conduction angles than DC)
thJ-C
Conduction angle
Single side
Double side
Units Conditions
180°
120°
60°
0.0010
0.0017
0.0044
0.0010
0.0017
0.0044
K/W
T = T max.
J
J
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