ST330S 查看數據表（PDF） - International Rectifier
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ST330S Datasheet PDF : 8 Pages
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Switching
Parameter
di/dt Max. non-repetitive rate of rise
of turned-on current
td
Typical delay time
tq
Typical turn-off time
ST330S Series
Bulletin I25156 rev. C 03/03
ST330S
1000
1.0
100
Units Conditions
A/µs
µs
Gate drive 20V, 20Ω, tr ≤ 1µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
Blocking
Parameter
dv/dt
IRRM
IDRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST330S
500
50
Units Conditions
V/µs TJ = TJ max. linear to 80% rated VDRM
mA TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
PGM Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT DC gate current required
to trigger
VGT DC gate voltage required
to trigger
IGD DC gate current not to trigger
VGD DC gate voltage not to trigger
ST330S
10.0
2.0
3.0
20
5.0
Units Conditions
W
TJ = TJ max, tp ≤ 5ms
TJ = TJ max, f = 50Hz, d% = 50
A TJ = TJ max, tp ≤ 5ms
V TJ = TJ max, tp ≤ 5ms
TYP.
200
MAX.
-
100
200
50
-
2.5
-
1.8
3.0
1.1
-
10
0.25
TJ = - 40°C
mA TJ = 25°C
TJ = 125°C
TJ = - 40°C
V TJ = 25°C
TJ = 125°C
mA
V
TJ = TJ max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
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