STB75NH02LT4 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

STB75NH02LT4

N-Channel 24V - 0.0062Ω - 60A - D2PAK STripFET™ III Power MOSFET

STMicroelectronics 

STB75NH02L

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Vspike (1) Drain-source voltage rating

VDS

Drain-source voltage (VGS = 0)

VGS

Gate-source voltage

ID (2)

Drain current (continuous) at TC = 25°C

ID

Drain current (continuous) at TC = 100°C

IDM (3) Drain current (pulsed)

PTOT (4) Total dissipation at TC = 25°C

Derating factor

EAS (5) Single pulse avalanche energy

TJ

Operating junction temperature

Tstg

storage temperature

1. Garanted when external Rg = 4.7Ω and tf < tfmax

2. Value limited by wire bonding

3. Pulse width limited by safe operating area

4. This value is rated according to RthJC

5. Starting TJ =25°C, Id = 30A, Vdd = 15V

Table 2. Thermal data

Symbol

Parameter

RthJC

RthJA

Tl

Thermal resistance junction-case max

Thermal resistance junction-amb max

Maximum lead temperature for soldering

purpose

Electrical ratings

Value

30

24

± 20

60

53

240

80

0.53

360

-55 to 175

Unit

V

V

V

A

A

A

W

W/°C

mJ

°C

Value

1.88

62.5

300

Unit

°C/W

°C/W

°C

3/13

Share Link: