STB75NH02LT4 查看數據表（PDF） - STMicroelectronics

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STB75NH02LT4

N-Channel 24V - 0.0062Ω - 60A - D2PAK STripFET™ III Power MOSFET

STMicroelectronics 

Electrical characteristics

2 Electrical characteristics

STB75NH02L

(TCASE = 25 °C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

V(BR)DSS

Drain-source breakdown

voltage

IDSS

Zero gate voltage drain

current (VGS = 0)

IGSS

VGS(th)

Gate body leakage current

(VDS = 0)

Gate threshold voltage

RDS(on)

Static drain-source on

resistance

Test conditions

ID = 25 mA, VGS= 0

VDS = 20 V,

VDS = 20 V,Tc = 125°C

VGS = ±20V

VDS= VGS, ID = 250 µA

VGS= 10 V, ID= 30 A

VGS= 5 V, ID= 30 A

Table 4. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Ciss

Coss

Crss

Qg

Qgs

Qgd

RG

Forward Transconductance VDS =10V, ID = 18A

Input Capacitance

Output Capacitance

VDS =15V, f=1 MHz, VGS=0

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Input Resistance

VDD=10V, ID = 60 A

VGS =5V

Figure 14

f=1MHz Gate DC Bias =0

Test Signal Level =20mV

Open Drain

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Table 5. Switching times

Symbol

Parameter

td(on)

tr

Turn-on delay time

rise time

td(off)

tf

Turn-off delay time

fall time

Test conditions

VDD=10 V, ID=30 A,

RG=4.7Ω, VGS=10V

Figure 15

VDD=10 V, ID=30A,

RG=4.7Ω, VGS=10V

Figure 15

Min. Typ. Max. Unit

24

V

1

µA

10

µA

±100

nA

1

1.8

V

0.0062 0.008

Ω

0.008 0.014

Ω

Min. Typ. Max. Unit

27

S

2050

pF

545

pF

70

pF

17

22

nC

7.7

nC

3.5

nC

1.1

Ω

Min. Typ. Max. Unit

12

ns

200

ns

18

ns

25

ns

4/13

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