SUM60N06-15-E3(2003) 查看數據表（PDF） - Vishay Semiconductors

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SUM60N06-15-E3
(Rev.:2003)

N-Channel 60-V (D-S) 175 °C MOSFET

Vishay Semiconductors 

SUM60N06-15

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature

2.5

100

VGS = 10 V

ID = 30 A

2.0

Source-Drain Diode Forward Voltage

1.5

TJ = 150_C

10

TJ = 25_C

1.0

0.5

0.0

−50 −25 0

25 50 75 100 125 150 175

TJ − Junction Temperature (_C)

1

0.2

0.4

0.6

0.8

1.0

1.2

VSD − Source-to-Drain Voltage (V)

1000

Avalanche Current vs. Time

100

10

IAV (A) @ TJ = 25_C

1

IAV (A) @ TJ = 150_C

0.1

0.00001 0.0001

0.001

0.01

0.1

1

tin (Sec)

On-Resistance vs. Junction Temperature

80

ID = 1 m A

75

70

65

60

−50 −25 0

25 50 75 100 125 150 175

TJ − Junction Temperature (_C)

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4

Document Number: 72080

S-32406—Rev. B, 24-Nov-03

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