SWP3205 查看數據表（PDF） - Xian Semipower Electronic Technology Co., Ltd.
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SWP3205 Datasheet PDF : 7 Pages
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SAMWIN
SW3205
N-channel MOSFET
Features
TO-220
■ High ruggedness
■ RDS(ON) (Max 0.008 Ω)@VGS=10V
■ Gate Charge (Typ 146nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
1
2
3
1. Gate 2. Drain 3. Source
General Description
This N-channel enhancement mode field-effect power transistor using SAMWIN
semiconductor’s advanced planar stripe, DMOS technology intended for battery
Operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Also, especially designed to minimize RDS(ON), low gate charge and high rugged
avalanche characteristics.
BVDSS : 55V
ID
: 110A
RDS(ON) : 0.008 ohm
2
1
3
Order Codes
Item
1
Sales Type
SW P 3205
Marking
SW3205
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 3)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Value
55
110
75
390
± 20
1270
20
5
200
1.3
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
Min.
Typ.
Max.
0.75
0.5
62.5
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Unit
oC/W
oC/W
oC/W
1/7
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