SWD1N60 查看數據表（PDF） - Xian Semipower Electronic Technology Co., Ltd.
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SWD1N60 Datasheet PDF : 7 Pages
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SAMWIN
SW1N60
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
100
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
100
101
V , Drain-Source Voltage [V]
DS
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1. V = 50V
DS
2. 250μs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs.
diode forward voltage
30
25
20
V = 10V
15
GS
100
150،ة
25،ة
10
5
0
0.0
V = 20V
GS
، طNote : T = 25،ة
J
0.5
1.0
1.5
2.0
2.5
I , Drain Current [A]
D
، طNotes :
1. V = 0V
GS
2. 250¥ىs Pulse Test
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain voltage [V]
SD
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
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