SW7N60A 查看數據表（PDF） - Xian Semipower Electronic Technology Co., Ltd.
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SW7N60A Datasheet PDF : 7 Pages
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SAMWIN
SW7N60A
N-channel MOSFET
Features
TO-220F
TO-220
■ High ruggedness
■ RDS(ON) (Max 1.3 Ω)@VGS=10V
■ Gate Charge (Typ 38nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
12 3
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BVDSS : 600V
ID
: 7.0A
RDS(ON) : 1.3ohm
2
1
3
Order Codes
Item
1
2
Sales Type
SW P 7N60A
SW F 7N60A
Marking
SW7N60A
SW7N60A
Package
TO-220
TO-220F
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 1)
(note 2)
(note 1)
(note 3)
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220
TO-220F
600
7.0
7.0*
5.1
4.1*
28
± 30
490
14.2
4.5
147
53*
1.18
0.43
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
TO-220
TO-220F
0.85
2.35
0.5
62.5
Unit
oC/W
oC/W
oC/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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