TC660COA 查看數據表（PDF） - TelCom Semiconductor, Inc

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TC660COA

100mA CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER

TelCom Semiconductor, Inc 

100mA CHARGE PUMP DC-TO-DC

VOLTAGE CONVERTER

TC660

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ........................................................... +6V

LV, FC, OSC Input

Voltage (Note 1) ....................... VOUT – 0.3V to (V+ +0.3V)

Current Into LV (Note 1) ...................... 20 µA for V+ >3.5V

Output Short Duration (VSUPPLY ≤ 5.5V) (Note 3) .. 10 Sec

Power Dissipation (Note 2) (TA ≤ 70°C)

SOIC ............................................................... 470mW

Plastic DIP ......................................................730mW

Operating Temperature Range

C Suffix .................................................. 0°C to +70°C

E Suffix ............................................. – 40°C to +85°C

Storage Temperature Range ................ – 65°C to +150°C

Lead Temperature (Soldering, 10 sec) ................. +300°C

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under "Absolute Maximum Ratings" may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operation sections of the specifications is not implied.

Exposure to absolute maximum rating conditions for extended periods may

affect device reliability.

ELECTRICAL CHARACTERISTICS: Specifications Measured Over Operating Temperature Range With,

V+ = 5V, COSC = Open, C1, C2 = 150µF, FC = Open, Test Circuit

(Figure 1), unless otherwise indicated.

Symbol Parameter

Test Conditions

Min Typ Max Unit

I+

Supply Current

RL = ∞

FC pin = OPEN or GND

FC pin = V+

—

200 500 µA

—

1

3

mA

V+

Supply Voltage Range

LV = HIGH, RL = 1 kΩ

3

—

5.5 V

LV = GND, RL = 1 kΩ

1.5

—

5.5

LV = OUT, RL = 1 kΩ (Figure 9)

2.5

—

5.5

ROUT

Output Source Resistance

IOUT = 100mA

—

6.5

10 Ω

IOUT

Output Current

VOUT < – 4V

100

—

— mA

FOSC

Oscillator Frequency

Pin 7 open; Pin 1 open or GND

Pin 1 = V+

—

10

— kHz

—

90

—

IOSC

Input Current

Pin 1 open

Pin 1 = V+

—

+1.1

—

µA

—

+5

—

PEFF

Power Efficiency (Note 4)

RL = 1 kΩ connected between V+ & VOUT

96

98

—%

RL = 500Ω connected between VOUT & GND 92

96

—

IL = 100mA to GND

—

88

—

VOUT EFF

Voltage Conversion Efficiency

RL = ∞

99 99.9 — %

NOTES: 1. Connecting any input terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no

inputs from sources operating from external supplies be applied prior to "power up" of the TC660.

2. Derate linearly above 50°C by 5.5 mW/°C.

3. To prevent damaging the device, do not short VOUT to V+.

4. To maximize output voltage and efficiency performance, use low ESR capacitors for C1 and C2.

4-6

TELCOM SEMICONDUCTOR, INC.

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