TN2640K4-G 查看數據表（PDF） - Supertex Inc
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TN2640K4-G Datasheet PDF : 8 Pages
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Product Marking
Si YYWW
TN2640
LLLLLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-252 (D-PAK)
TN2640
YYWW
N2640
LLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
Package may or may not include the following marks: Si or
8-Lead SOIC
SiTN
2640
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
Thermal Characteristics
Package
ID
(continuous)†
ID
(pulsed)
TO-252 (D-PAK)
500mA
3.0A
8-Lead SOIC
260mA
2.0A
TO-92
220mA
2.0A
Notes:
† ID (continuous) is limited by max rated Tj.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm
Power Dissipation
@TA = 25OC
2.5W‡
1.3W‡
0.74W
IDR†
500mA
260mA
220mA
IDRM
3.0A
2.0A
2.0A
Electrical Characteristics (TA = 25°C unless otherwise specified)
Sym Parameter
Min Typ
BVDSS
VGS(th)
ΔVGS(th)
IGSS
Drain-to-source breakdown voltage
Gate threshold voltage
Change in VGS(th) with temperature
Gate body leakage
IDSS Zero gate voltage drain current
400
-
0.8
-
-
-2.5
-
-
-
-
-
Max
-
2.0
-4.0
100
10
1.0
ID(ON) On-state drain current
RDS(ON)
Static drain-to-source
on-state resistance
ΔRDS(ON)
GFS
CISS
COSS
CRSS
Change in RDS(ON) with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
1.5 3.5
-
2.0 4.0
-
-
3.2
5.0
-
3.0
5.0
-
-
0.75
200 330
-
-
210 225
-
30
50
-
8.0
15
Units
V
V
mV/OC
nA
µA
mA
A
Ω
%/OC
mmho
Conditions
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 2.0mA
VGS = VDS, ID = 2.0mA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max rating
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
VGS = 5.0V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 4.5V, ID = 500mA
VGS = 10V, ID = 500mA
VGS = 10V, ID = 500mA
VDS = 25V, ID = 100mA
VGS = 0V,
pF VDS = 25V,
f = 1.0MHz
Doc.# DSFP-TN2640
C071913
Supertex inc.
2
www.supertex.com
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