UFB120FA20P 查看數據表（PDF） - Vishay Semiconductors
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UFB120FA20P Datasheet PDF : 8 Pages
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UFB120FA20P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage VBR
Forward voltage
VFM
Reverse leakage current
IRM
Junction capacitance
CT
IR = 100 μA
IF = 60 A
IF = 60 A, TJ = 150 °C
VR = VR rated
TJ = 150 °C, VR = VR rated
VR = 200 V
200
-
-
0.96
-
0.79
-
-
-
-
-
105
MAX.
-
1.13
0.90
100
1.0
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
-
-
28
Reverse recovery time
trr
TJ = 25 °C
-
32
-
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
64
-
IF = 50 A
-
4.0
-
dIF/dt = 200 A/μs
VR = 100 V
-
8.2
-
-
64
-
-
263
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case,
single diode conducting
Junction to case,
both diodes conducting
Case to heatsink
Weight
RthJC
RthCS
Flat, greased surface
Mounting torque
MIN.
-
-
-
-
-
TYP.
0.8
0.4
0.05
30
1.3
MAX. UNITS
1.1
0.55
K/W
-
-
g
-
Nm
www.vishay.com
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For technical questions within your region, please contact one of the following: Document Number: 94522
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 21-Jul-10
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