UFB130FA20 查看數據表（PDF） - Vishay Semiconductors
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UFB130FA20 Datasheet PDF : 7 Pages
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www.vishay.com
VS-UFB130FA20
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage VBR
Forward voltage
VFM
Reverse leakage current
IRM
Junction capacitance
CT
IR = 100 μA
IF = 60 A
IF = 60 A, TJ = 175 °C
VR = VR rated
TJ = 175 °C, VR = VR rated
VR = 200 V
200
-
-
0.96
-
0.75
-
2
-
-
-
105
MAX.
-
1.13
0.89
50
1
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Reverse recovery time
Peak recovery current
Reverse recovery charge
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
-
trr
TJ = 25 °C
-
IRRM
Qrr
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
IF = 50 A
-
dIF/dt = 200 A/μs
VR = 100 V
-
-
-
TYP.
32
42
68
4.0
9.0
82
295
MAX.
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, single leg conducting
Junction to case, both leg conducting
RthJC
Case to heatsink
Weight
RthCS
Mounting torque
Case style
TEST CONDITIONS
Flat, greased surface
MIN.
-
-
-
-
-
TYP. MAX.
-
0.72
-
0.36
0.10
-
30
-
-
1.3
SOT-227
UNITS
°C/W
g
Nm
Revision: 22-Jul-13
2
Document Number: 93606
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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