UGB8JCT-E3 查看數據表（PDF） - Vishay Semiconductors
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UGB8JCT-E3 Datasheet PDF : 5 Pages
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New Product
UG(F,B)8HCT & UG(F,B)8JCT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
10
UG8JCT, UGB8JCT
8
6
UGF8JCT
4
2 P.C.B. with 7.5 x 7.5 x 0.3 cm
Copper Pad
0
0
25
50
75
100
125
150
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
10 000
1000
100
TJ = 125 °C
TJ = 100 °C
10
TJ = 25 °C
1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
100
80
60
40
20
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
100
10
1
0.1
0.01
0.5
TJ = 25 °C max.
Pulse Width = 300 µs
1 % Duty Cycle
1.0
1.5
2.0
2.5
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
140
Qrr
120 Trr
IF = 4 A
VR = 30 V
100
80
60
dI/dt =
240 A/µs
60 A/µs
50 A/µs
50 A/µs
60 A/µs
40
240 A/µs
20
0
25
50
75
100
125
150
Junction Temperature (°C)
Figure 6. Reverse Switching Characteristics Per Diode
Document Number: 88766 For technical questions within your region, please contact one of the following:
Revision: 09-Nov-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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