DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

UPA1700AG-E2 查看數據表(PDF) - NEC => Renesas Technology

零件编号
产品描述 (功能)
生产厂家
UPA1700AG-E2
NEC
NEC => Renesas Technology NEC
UPA1700AG-E2 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
10
1
0.1
0
Tch = 125 °C
75 °C
25 °C
–25 °C
VDS = 10 V
2
4
6
8
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
Tch = –25 °C
25 °C
10
75 °C
125 °C
1
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
70
60
50
40
VGS = 4 V
30
20
VGS=10 V
10
0
1
10
100
ID - Drain Current - A
4
µPA1700A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
20
VGS = 10 V
4V
10
0
0.2
0.4
0.6
0.8
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
150
ID = 3.5 A
100
50
0
5
10
15
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
2.0
ID = 1 mA
1.0
0
–20 0 20 40 60 80 100 120 140
Tch - Channel Temperature - °C

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]