UPA1800GR-9JG 查看數據表（PDF） - NEC => Renesas Technology

零件编号

产品描述 (功能)

生产厂家

UPA1800GR-9JG

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC => Renesas Technology 

µ PA1800

5 ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

Gate Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

Gate Cut-off Voltage

VGS(off) VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

| yfs | VDS = 10 V, ID = 3.0 A

Drain to Source On-state Resistance

RDS(on)1 VGS = 10 V, ID = 3.0 A

RDS(on)2 VGS = 4.5 V, ID = 3.0 A

RDS(on)3 VGS = 4.0 V, ID = 3.0 A

Input Capacitance

Ciss

VDS = 10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 15 V

Rise Time

tr

ID = 3.0 A

Turn-off Delay Time

td(off)

VGS(on) = 10 V

Fall Time

tf

RG = 10 Ω

Total Gate Charge

QG

VDD = 24 V

Gate to Source Charge

QGS ID = 5.0 A

Gate to Drain Charge

QGD

VGS = 10 V

Diode Forward Voltage

VF(S-D) IF = 5.0 A, VGS = 0 V

Reverse Recovery Time

Reverse Recovery Charge

trr

IF = 5.0 A, VGS = 0 V

Qrr

di/dt = 100 A/µs

MIN. TYP. MAX. UNIT

10 µA

±10 µA

1.0 1.41 2.0 V

3.0 7.0

S

20 27 mΩ

29 39 mΩ

32 45 mΩ

680

pF

470

pF

170

pF

18

ns

70

ns

60

ns

26

ns

23

nC

2

nC

7

nC

0.74

V

60

ns

80

nC

TEST CIRCUIT 1 SWITCHING TIME

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

RG

PG.

VGS

0

τ

τ = 1µs

Duty Cycle ≤ 1 %

RL

VGS

VGS

Wave Form

010 %

VGS(on) 90 %

VDD

ID

90 %

ID

ID

0 10 %

Wave Form

90 %

10 %

td(on) tr td(off) tf

ton

toff

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D11407EJ1V0DS00

Share Link: