UPA502T 查看數據表（PDF） - NEC => Renesas Technology
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UPA502T Datasheet PDF : 6 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA502T
N-CHANNEL MOS FET (5-PIN 2 CIRCUITS)
The µPA502T is a mini-mold device provided with two
MOS FET circuits. It achieves high-density mounting and
saves mounting costs.
PACKAGE DIMENSIONS (in millimeters)
0.32
+0.1
–0.05
0.16+–00..016
FEATURES
• Two source common MOS FET circuits in package the
same size as SC-59
• Complement to µPA503T
• Automatic mounting supported
0.95 0.95
1.9
2.9 ±0.2
0 to 0.1
0.8
1.1 to 1.4
PIN CONNECTION (Top view)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)*
PT
Tch
Tstg
RATINGS
50
±20
100
200
300 (TOTAL)
150
–55 to 150
* PW ≤ 10 ms, Duty Cycle ≤ 50 %
UNIT
V
V
mA
mA
mW
˚C
˚C
Document No. G11238EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
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