UPA502T 查看數據表（PDF） - NEC => Renesas Technology
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UPA502T Datasheet PDF : 6 Pages
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µPA502T
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
Drain Cut-off Current
IDSS
Gate Leakage Current
IGSS
Gate Cut-off Voltage
VGS(off)
Forward Transfer Admittance
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Drain to Source On-State Resistance RDS(on)1
Drain to Source On-State Resistance RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
TEST CONDITIONS
VDS = 50 V, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 5.0 V, ID = 1.0 µA
VDS = 5.0 V, ID = 10 mA
VGS = 4.0 V, ID = 10 mA
VGS = 10 V, ID = 10 mA
VDS = 5.0 V, VGS = 0, f = 1.0 MHz
td(on) VGS(on) = 5.0 V, RG = 10 Ω
VDD = 5.0 V, ID = 10 mA
RL = 500 Ω
MIN.
0.8
20
Marking: DA
TYP.
1.4
19
15
16
12
3
17
10
68
38
MAX.
1.0
±1.0
1.8
30
25
UNIT
µA
µA
V
mS
Ω
Ω
pF
PF
pF
ns
ns
ns
ns
SWITCHING TIME MEASUREMENT CIRCUIT AND MEASUREMENT CONDITIONS
(RESISTANCE LOADED)
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1 %
DUT
RL
VDD
Gate
Voltage
Waveform
VGS
10 %
0
VGS(on)
90 %
90 %
ID
Drain
Current
Waveform
10 %
0
td(on)
ID
tr td(off)
90 %
10 %
tf
ton
toff
2
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