UPA502T 查看數據表（PDF） - NEC => Renesas Technology
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UPA502T Datasheet PDF : 6 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
100
ID = 10 mA
Pulsed
50
measurement
10
5
1
1
5 10
50 100
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
30 VGS = 10 V
Pulsed
measurement
20
10
0
–30
0
30 60
90 120 150
Tch - Channel Temperature - ˚C
SWITCHING CHARACTERISTICS
100
td(off)
50
tf
20
10
10
tr
td(on)
VDD = 5 V
VGS = 5 V
RG = 10 Ω
20
50
100
ID - Drain Current - mA
4
µPA502T
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1000
VGS = 10 V
Pulsed
500
measurement
100
50
10
10
TA = 75 ˚C
25 ˚C
–25 ˚C
50 100
500 1000
ID - Drain Current - mA
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
Ciss
10
Coss
Crss
1
VGS = 0
0.1 f = 1 MHz
0.1
1
10
100
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
0.4 0.5 0.6 0.7 0.8 0.9
1
VSD - Source to Drain Voltage - V
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