ARF526S16 查看數據表（PDF） - Power Semiconductors

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ARF526S16

FAST RECOVERY DIODE

Power Semiconductors 

ANSALDO

Ansaldo Trasporti s.p.a.

Unita' Semiconduttori

Via N. Lorenzi 8 - I 16152 GENOVA - ITALY

Tel. int. +39/(0)10 6556549 - (0)10 6556488

Fax Int. +39/(0)10 6442510

Tx 270318 ANSUSE I -

FAST RECOVERY DIODE

TARGET SPECIFICATION

feb 97 - ISSUE : 02

ARF526

Repetitive voltage up to

Mean forward current

Surge current

Symbol Characteristic

BLOCKING

V RRM

Repetitive peak reverse voltage

V RSM

Non-repetitive peak reverse voltage

I RRM

Repetitive peak reverse current

Conditions

V=VRRM

CONDUCTING

I F (AV)

Mean forward current

180° sin ,50 Hz, Th=55°C, double side cooled

I F (AV)

I FSM

I² t

V FM

V F(TO)

rF

Mean forward current

Surge forward current

I² t

Forward voltage

Threshold voltage

Forward slope resistance

180° square,50 Hz,Th=55°C,double side cooled

Sine wave, 10 ms

reapplied reverse voltage up to 50% VRSM

Forward current =2000 A

SWITCHING

t rr

Reverse recovery time

Q rr

Reverse recovery charge

I rr

Peak reverse recovery current

s

Softness (s-factor), min

V FR

Peak forward recovery

I F = 1000 A

di/dt= 100 A/µs

VR = 50 V

di/dt= 100 A/µs

MOUNTING

R th(j-h)

Thermal impedance

Tj

Operating junction temperature

F

Mounting force

Mass

Junction to heatsink, double side cooled

ORDERING INFORMATION : ARF526 S 16

standard specification

VRRM/100

1600 V

1345 A

20 kA

Tj

[°C] Value Unit

125 1600

V

125 1700

V

125 50

mA

1345

A

1350

A

125 20

kA

2000 x1E3 A²s

125 1.6

V

125

1.00

V

125

0.300 mohm

3.5

µs

125 250

µC

145

A

0.5

125 15

V

26

°C/kW

-30 / 125 °C

18.0 / 20.0 kN

500

g

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