VSC6250QW 查看數據表（PDF） - Vitesse Semiconductor

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VSC6250QW

1Gb/s 16-Channel Drive-Side Deskew IC

Vitesse Semiconductor 

1Gb/s 16-Channel

Drive-Side Deskew IC

VITESSE

SEMICONDUCTOR CORPORATION

Data Sheet

VSC6250

DC Characteristics

Table 3: Single Ended ECL Inputs and Outputs

Parameter

VOH

VOL

VIH

VIL

IIH

IIL

Description

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage

Input HIGH Current

Input LOW Current

Min Typ Max Units Conditions

-1020

—

-700

mV

-2000

—

-1620

mV

-1165

—

-700

mV

-2000

—

-1475

mV

-

—

200

µA

VIN = VIH (max)

-50

—

—

µA

VIN = VIL (min)

NOTE: VTT = -2.0V ± 5%, VCC = VCCA = GND, RLOAD = 50Ω to -2.0V, external reference (VREF) = -1.32V ± 25mV.

Table 4: Differential ECL Inputs and Outputs

Parameter

Description

Min Typ Max Units Conditions

VINDIFF

Input Voltage Differential

200

—

—

mV

Required for full

output swing

Common-mode range

VINCM

Input Common-Mode Voltage

-1.5

—

-0.5

V

required for full output

swing with VDIFF

applied

VOUTDIFF

Output Voltage Differential

400

—

—

mV Output voltage swing

VOUTCM

Output Common-Mode Voltage

-1.5

—

-0.7

V

Common-mode output

voltage

Table 5: VSC6250 Power Dissipation

Parameter

Description

Min

ITT

VTT Supply Current

—

PD

Power Dissipation(1)

—

NOTE: (1) Output power dissipation does not include load power.

Typ

2000

4

Max

2870

6

Units

mA

W

Conditions

Page 8

© VITESSE SEMICONDUCTOR CORPORATION

741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896

G52197-0, Rev. 4.0

8/19/00

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