WEDPNF8M722V-1212BC 查看數據表（PDF） - White Electronic Designs Corporation

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WEDPNF8M722V-1212BC

8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package

White Electronic Designs Corporation 

White Electronic Designs WEDPNF8M722V-XBX

8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module

Multi-Chip Package ADVANCED*

FEATURES

n Sector Architecture

n Package:

• 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm

n Commercial, Industrial and Military Temperature Ranges

n Weight:

• WEDPNF8M722V-XBX - 2.5 grams typical

•One 16KByte, two 8KBytes, one 32KByte, and fifteen

64KBytes in byte mode

•One 8K word, two 4K words, one 16K word, and

fifteen 32K word sectors in word mode.

•Any combination of sectors can be concurrently

erased. Also supports full chip erase

SDRAM PERFORMANCE FEATURES

n Organized as 8M x 72

n High Frequency = 100, 125MHz

n Single 3.3V ±0.3V power supply

n Fully Synchronous; all signals registered on positive

edge of system clock cycle

n Internal pipelined operation; column address can be

changed every clock cycle

n Internal banks for hiding row access/precharge

n Programmable Burst length 1,2,4,8 or full page

n 4096 refresh cycles

FLASH PERFORMANCE FEATURES

n Boot Code Sector Architecture (Bottom)

n Embedded Erase and Program Algorithms

n Erase Suspend/Resume

•Supports reading data from or programing data to a

sector not being erased

BENEFITS

n 44% SPACE SAVINGS

n Reduced part count

n Reduced I/O count

•25% I/O Reduction

n Suitable for hi-reliability applications

n SDRAM Upgradeable to 16M x 72 density (contact

n User Configurable as 2Mx8, 1M x16 or 512K x 32

factory for information)

n Access Times of 100, 120, 150ns

n 3.3 Volt for Read and Write Operations

* This data sheet describes a product that may or may not be under

development and is subject to change or cancellation without notice.

n 1,000,000 Erase/Program Cycles

September 2002 Rev. 2

1

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

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