WFP75N08 查看數據表（PDF） - Wisdom technologies
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WFP75N08 Datasheet PDF : 7 Pages
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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
102
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
VGS = 10V
VGS = 20V
※ Note : TJ = 25℃
70
140
210
280
350
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
7000
6000
5000
4000
3000
2000
1000
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
Coss
2. f = 1 MHz
Ciss
Crss
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101 175℃
25℃
100
10-1
2
-55℃
※ Notes :
1. VDS = 30V
2. 250µ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
10-1
0.2
175℃ 25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
12
VDS = 30V
10
VDS = 48V
8
6
4
2
※ Note : ID = 75A
0
0
10 20 30 40 50 60 70 80 90
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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