WFF2N60 查看數據表（PDF） - Wisdom technologies
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WFF2N60 Datasheet PDF : 6 Pages
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Typical Characteristics (Continued)
HIGH VOLTAGE N-Channel MOSFET
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
IVG=S =2500Vμ
A
D
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
101
100 µs
1 ms
10 ms
100
100 ms
DC
10-1
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9-2. Maximum Safe Operating Area
for WFF2N60
3.0
2.5
2.0
1.5
1.0
※ Notes :
0.5
1. VGS = 10 V
2. ID = 2.5 A
0.0
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
2.4
2.0
1.6
1.2
0.8
0.4
0.0
25
50
75
100
125
150
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs Case Temperature
D =0.5
100
0 .2
0 .1
0 .0 5
1 0-1
0 .0 2
0 .0 1
※ N ote s :
P 1 . Z θ
(t)
JC
=
5 .5
℃ /W
M ax.
2.
D Du Mty
F ac tor,
D =t /t
12
t 3 .
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
1
t2
sin g le p u lse
1 0-2
1 0 -5
1 0 -4
1 0-3
1 0 -2
1 0-1
100
101
t1, S q ua re W a ve P u lse D u ratio n [se c]
Figure 11-2. Transient Thermal Response Curve for WFF2N60
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Rev.A0,August , 2010 |
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