WFF4N60 查看數據表（PDF） - Wisdom technologies
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WFF4N60 Datasheet PDF : 6 Pages
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HIGH VOLTAGE N-Channel MOSFET
Electrical Characteristics Tc=25℃ unless other wise noted
Symbol
Parameter
Test Condition Min. Typ.
Off Characteristics
BVDSS
△BVDSS/
△TJ
IDSS
IGSSF
IGSSR
Drain-Sourse Breakdown Voltage
Breakdown Voltage Temperature
Conficient
Zero Gate Voltage Drain Current
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
ID=250μA，VGS=0
ID=250μA,Reference
to 25℃
Vds=600V, Vgs=0V
Vds=480V, Tc=125℃
Vgs=+30V, Vds=0V
Vgs=-30V, Vds=0V
600
--
--
0.6
--
--
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Date Threshold Voltage
Static Drain-Sourse
On-Resistance
Id=250uA,Vds=Vgs
Id=2A,Vgs=10V
2
--
--
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V，VGS=0，
f=1.0MHz
--
520
--
70
--
8
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
--
13
VDD=300V，ID=4A
RG=25Ω (Note 3,4)
--
45
--
25
--
35
VDS=480,VGS=10V，
--
15
--
3.4
ID=4A (Note 3,4)
7.1
Drain-Sourse Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Qrr
*Notes
Maximun Continuous Drain-Sourse Diode Forward Current
--
Maximun Plused Drain-Sourse DiodeForwad Current
--
Drain-Sourse Diode Forward
Id=4A
--
Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS=4A,VGS =0V
--
diF/dt=100A/μs (Note3)
--
1, L=27.5mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
--
--
--
250
1.25
Max Units
--
V
-- V/℃
10 μA
100 μA
100 nA
-100 nA
4
V
2.3
Ω
670 pF
90
pF
11
pF
35
nS
100 nS
60
nS
80
nS
20
nC
--
nC
--
nC
4
A
16
A
1.25 V
--
nS
--
μC
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Rev.A0,August , 2010 |
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