WFF830 查看數據表（PDF） - Unspecified
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WFF830 Datasheet PDF : 7 Pages
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Typical Characteristics
Top :
101
15V.0GSV
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
6
5
VGS = 10V
4
VGS = 20V
3
2
※ Note : TJ = 25℃
1
0
3
6
9
12
15
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1800
1500
1200
900
600
300
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Crss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
12
VDS = 100V
10
VDS = 250V
8
VDS = 400V
6
4
2
※ Note : ID = 5.0 A
0
0
4
8
12
16
20
24
28
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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