WFP50N06 查看數據表（PDF） - Wisdom technologies
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WFP50N06 Datasheet PDF : 7 Pages
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Typical Characteristics
Top : 15.V0GVS
102
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
※ Note :
1. 250µs Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.05
0.04
VGS = 10V
0.03
VGS = 20V
0.02
0.01
0.00
0
※ Note : TJ = 25℃
50
100
150
200
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3500
3000
2500
2000
1500
1000
500
0
10-1
Coss
Ciss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101
175℃
25℃
100
2
-55℃
※ Notes :
1. VDS = 30V
2. 250µ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
0.2
175℃
25℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 30V
VDS = 48V
8
6
4
2
※ Note : ID = 50A
0
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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