WFP50N06 查看數據表（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
零件编号
产品描述 (功能)
生产厂家
WFP50N06 Datasheet PDF : 7 Pages
| |||
WFP50N06
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Test Condition
Min Type Max Unit
Gate leakage current
IGSS
VGS=±20V,VDS=0V
-
-
±100 nA
Gate-source breakdown voltage
V(BR)GSS
IG=±10 µA,VDS=0V
±20
-
-
V
Drain cut -off current
VDS=60V,VGS=0V
IDSS
VDS=60V,Tc=125℃
-
-
1
µA
-
-
250 µA
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
60
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=25A
-
20
22 mΩ
Forward Transconductance
gfs
VDS=25V,ID=25A
-
22
-
S
Input capacitance
Ciss
VDS=25V,
-
1180 1540
Reverse transfer capacitance
Output capacitance
Crss
VGS=0V,
Coss
f=1MHz
-
65
90
pF
-
440
580
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
tr
VDD=30V,
ton
ID=25A ，
RG=25Ω，
tf
toff
VGS=10V (Note4,5)
-
15
40
-
105
220
ns
-
60
130
-
65
140
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
VDD=48V,
Qg
VGS=10V,
Qgs
ID=50A
-
31
41
nC
-
8
-
Gate-drain("miller") Charge
Qgd
(Note4,5) -
13
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
-
-
-
50
A
Pulse drain reverse current
IDRP
-
-
-
200
A
Forward voltage(diode)
VDSF
IDR=50A,VGS=0V
-
-
1.5
V
Reverse recovery time
trr
IDR=50A,VGS=0V,
-
52
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
75
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=0.5mH IAS=50A,VDD=25V,VGS=10V ,Starting TJ=25℃
3.ISD≤50A,di/dt≤380A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
Share Link: 