WFW13N50 查看數據表（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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WFW13N50 Datasheet PDF : 7 Pages
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Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Test Condition
WFW13N50
Min Type Max Unit
Gate leakage current
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
Gate-source breakdown voltage
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
Drain cut -off current
VDS=500V,VGS=0V
-
-
1
µA
IDSS
VDS=400V,TC=125℃
10
µA
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
500
-
-
V
Breakdown voltage Temperature
Coefficient
△BVDSS/
△TJ
ID=250µA,Referenced
to 25℃
-
0.5
-
V/℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
3
-
4.5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=6.5A
-
0.37 0.46
Ω
Forward Transconductance
gfs
VDS=50V,ID=6.5A
-
15
-
S
Input capacitance
Reverse transfer capacitance
Output capacitance
Ciss
Crss
Coss
VDS=25V,
VGS=0V,
f=1MHz
-
1580 2055
-
20
25
pF
-
180
235
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
tr
VDD=250V,
-
25
60
ton
ID=13A
tf
RG=9.1Ω
-
100
210
ns
-
130
270
toff
RD=31Ω (Note4,5)
-
100
210
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
VDD=400V,
Qg
VGS=10V,
Qgs
ID=13A
-
43
56
nC
-
7.5
-
Gate-drain("miller") Charge
Qgd
(Note4,5) -
18.5
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
-
-
-
13
A
Pulse drain reverse current
IDRP
-
-
-
52
A
Forward voltage(diode)
VDSF
IDR=13A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=13A,VGS=0V,
-
442
633
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
2.16 3.24
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=500uH IAS=13A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤13A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
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