ZXMN10A07FTA 查看數據表（PDF） - Zetex => Diodes

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ZXMN10A07FTA

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN10A07F

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)

PARAMETER

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State

Resistance (1)

Forward Transconductance (3)

DYNAMIC (3)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

SYMBOL MIN.

V(BR)DSS 100

IDSS

IGSS

VGS(th)

2.0

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Reverse Recovery Time (3)

trr

Reverse Recovery Charge (3)

Qrr

NOTES

(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

TYP.

1.6

138

12

6

1.8

1.5

4.1

2.1

2.9

0.7

1

27

12

MAX. UNIT

CONDITIONS.

V ID=250␮A, VGS=0V

1

␮A VDS=60V, VGS=0V

100

nA VGS=±20V, VDS=0V

4.0

V ID=250␮A, VDS= VGS

1

⍀ VGS=10V, ID=1.5A

1.1

⍀ VGS=6V, ID=1A

S VDS=15V,ID=1A

pF

pF

VDS=60 V, VGS=0V,

f=1MHz

pF

ns

ns VDD =50V, ID=1A

ns RG=6.0⍀, VGS=10V

ns

nC

nC

VDS=50V,VGS=10V,

ID=1.0A

nC

0.95

V TJ=25°C, IS=1.5A,

VGS=0V

ns TJ=25°C, IF=1.8A,

nC di/dt= 100A/µs

ISSUE 1 - MARCH 2002

4

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