ZXMN10A11GTC 查看數據表（PDF） - Zetex => Diodes

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ZXMN10A11GTC

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN10A11G

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN.

STATIC

Drain-source breakdown voltage

V(BR)DSS 100

Zero gate voltage drain current

IDSS

Gate-body leakage

IGSS

Gate-source threshold voltage

VGS(th)

2.0

Static drain-source On-State resistance (1) RDS(on)

Forward transconductance (3)

DYNAMIC (3)

Input capacitance

Output capacitance

Reverse transfer capacitance

SWITCHING(2) (3)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate charge

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

SOURCE-DRAIN DIODE

Diode forward voltage (1)

VSD

Reverse recovery time (3)

trr

Reverse recovery charge (3)

Qrr

NOTES:

(1) Measured under pulsed conditions. Width ≤ 300μs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

TYP.

4

274

21

11

2.7

1.7

7.4

3.5

3

5.4

1.4

1.5

0.85

26

30

MAX. UNIT

CONDITIONS

1

100

4.0

0.35

0.45

V ID=250␮A, VGS=0V

␮A VDS=100V, VGS=0V

nA VGS=±20V, VDS=0V

V ID=250␮A, VDS= VGS

⍀ VGS=10V, ID=2.6A

⍀ VGS=6V, ID=1.3A

S VDS=15V,ID=2.6A

pF

pF

VDS=50 V, VGS=0V,

f=1MHz

pF

ns

ns VDD =50V, ID=1A

ns RG≅6.0⍀, VGS=10V

ns

nC VDS=50V, VGS=5V,

ID=2.5A

nC

nC

VDS=50V,VGS=10V,

ID=2.5A

nC

0.95

V TJ=25°C, IS=1.85A,

VGS=0V

ns TJ=25°C, IF=1.0A,

di/dt= 100A/μs

nC

SEMICONDUCTORS

ISSUE 5 - DECEMBER 2004

4

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