ZXMN6A11D(2006) 查看數據表（PDF） - Zetex => Diodes
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ZXMN6A11D Datasheet PDF : 8 Pages
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ZXMN6A11DN8
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ VGS= 10V; Tamb=25°C(b)
@ VGS= 10V; Tamb=70°C(b)
@ VGS= 10V; Tamb=25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Pulsed source current (body diode)(c)
Power dissipation at Tamb =25°C(a)(d)
Linear derating factor
Power dissipation at Tamb =25°C(a)(e)
Linear derating factor
Power dissipation at Tamb =25°C(b)(d)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
PD
Tj, Tstg
Limit
60
±20
3.2
2.6
2.5
13.7
3.1
13.7
1.25
10
1.8
14
2.1
17
-55 to +150
Unit
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)(d)
Junction to ambient(a)(e)
Junction to ambient(b)(d)
Symbol
R⍜JA
R⍜JA
R⍜JA
Limit
100
70
60
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
Issue 3 - September 2006
2
© Zetex Semiconductors plc 2006
www.zetex.com
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