1NK60Z 查看數據表（PDF） - STMicroelectronics

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1NK60Z

N-channel 600 V, 13 Ω, 0.8 A TO-92, SOT-223 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

Electrical characteristics

STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

600

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

1

µA

50 µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

±10 µA

VGS(th) Gate threshold voltage

VDS= VGS, ID = 50µA

3 3.75 4.5 V

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 0.4A

13

15

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS =15V, ID = 0.4A

0.5

S

Ciss Input capacitance

94

pF

Coss

Crss

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

17.6

2.8

pF

pF

Coss

(2)

eq .

Equivalent output

capacitance

VGS=0, VDS =0V to 480V

11

pF

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=480V, ID = 0.8A

VGS =10V

(see Figure 21)

4.9 6.9 nC

1

nC

2.7

nC

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

4/16

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