BAV99LT1G(2016) 查看數據表（PDF） - ON Semiconductor
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BAV99LT1G Datasheet PDF : 3 Pages
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BAV99L, SBAV99L
OFF CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Reverse Breakdown Voltage,
(I(BR) = 100 mA)
V(BR)
100
Reverse Voltage Leakage Current,
(VR = 100 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance,
(VR = 0, f = 1.0 MHz)
IR
−
−
−
CD
−
Forward Voltage,
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time,
(IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) RL = 100 W
VF
−
−
−
−
trr
−
Forward Recovery Voltage,
(IF = 10 mA, tr = 20 ns)
VFR
−
Max
−
1.0
30
50
1.5
715
855
1000
1250
6.0
1.75
Unit
Vdc
mAdc
pF
mVdc
ns
V
CURVES APPLICABLE TO EACH DIODE
1000
100
100
TA = 150°C
TA = 125°C
10
TA = 85°C
TA = 55°C
1 TA = 25°C
TA = −40°C
0.1
0
TA = −55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
10
1.0
0.1
0.01
0.001
0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
10
20
30
40
50
60 70
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
0.61
0.59
0.57
0.55
0.53
0.51
0.49
0.47
0.45
0
1
2
3
4
5
6
7
8
VR, REVERSE VOLTAGE (V)
Figure 3. Capacitance
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