2N6261 查看數據表（PDF） - Semelab - > TT Electronics plc

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2N6261

(2N6282 - 2N6284) Silicon NPN Power Transistors

Semelab - > TT Electronics plc  

2N6261

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

ICEO

Collector Cut-off Current

with base open

ICEV

Collector – Cut-off Current

IEBO

VCEO(sus)

VCER(sus)

Emitter Cut-off Current

Collector – Emitter Sustaining

Voltage with base open*

External Base to Emitter

Resistance

hFE

VCE(sat)

D.C Forward Current*

Collector to Emitter Saturation

Voltage*

Test Conditions

VCE = 60V

IB = 0

VCE = 80V

VBE = -7V

VBE = -1.5V

Tc = 150°C

IB = 0

IC = 0.1A

IB = 0

VBE = 5V

VCE = 2V

VCE = 2V

IC = 1.5A

(RBE) = 100W

IC = 4A

IC = 1.5A

IB = .0.15A

Min.

80

85

5

25

VBE

Base – Emitter Voltage

VCE = 2V

Common Emitter Small Signal

Short Circuit, Forward Current

fhfe

Transfer Ratio Cut off

VCE = 4V

Frequency

IC = 1.5

IC = 0.1

0.03

Typ.

100

Max. Unit

0.5

0.5

mA

1.0

0.2

V

—

0.5

V

1.5

MHz

*Pulse test tp =300ms d £ 1.8%

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

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E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

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