C1722 查看數據表（PDF） - SavantIC Semiconductor

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生产厂家

C1722

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1722

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=;

V(BR)CBO Collector-base breakdown voltage

IC=100µA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=100µA ; IC=0

VCEsat Collector-emitter saturation voltage IC=50mA; IB=5mA

VBE

Base-emitter on voltage

IC=50m A ; VCE=10V

ICBO

Collector cut-off current

VCB=250V ;IE=0

ICEO

Collector cut-off current

VCE=250V; RBE=;

hFE

DC current gain

IC=50m A ; VCE=10V

fT

Transition frequency

IC=30m A ; VCE=20V

COB

Output capacitance

IE=0 ; VCB=50V; f=1MHz

MIN TYP. MAX UNIT

300

V

300

V

5

V

1.0 2.0

V

0.68 0.9

V

0.1

µA

2

µA

50

300

80

MHz

4.3

pF

2

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