2SD655ETZ-E 查看數據表（PDF） - Renesas Electronics
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2SD655ETZ-E Datasheet PDF : 6 Pages
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2SD655
Main Characteristics
Maximum Collector Dissipation Curve
600
400
200
0
50
100
150
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
1,000
300
VCE = 1 V
100
30
10
3
1
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
Collector to Emitter Saturation Voltage vs.
Collector Current
3.0
IC = 10 IB
1.0
0.3
0.1
0.03
0.01
0.003
3
10 30 100 300 1,000 3,000
Collector Current IC (mA)
Typical Output Characteristics
50
0.04
40
0.035
0.03
30
0.025
0.02
20
0.015
0.01
10
0.005 mA
IB = 0
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
10,000
3,000
1,000
DC Current Transfer Ratio vs.
Collector Current
VCE = 1 V
Pulse
300
100
30
10
1 3 10 30 100 300 1,000
Collector Current IC (mA)
3,000
1,000
Gain Bandwidth Product vs.
Collector Current
VCE = 1 V
300
100
30
10
3
0.3 1.0 3
10 30 100 300
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
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