2SJ317NYTR 查看數據表（PDF） - Renesas Electronics

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2SJ317NYTR

Silicon P Channel MOS FET

Renesas Electronics 

2SJ317

Silicon P Channel MOS FET

Description

High speed power switching

Low voltage operation

REJ03G0857-0200

(Previous: ADE-208-1191)

Rev.2.00

Sep 07, 2005

Features

• Very low on-resistance

• High speed switching

• Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.

Outline

RENESAS Package code: PLZZ0004CA-A

(Package name: UPAK R )

D

321

G

4

1. Gate

2. Drain

3. Source

4. Drain

Note: Marking is “NY”.

S

*UPAK is a trademark of Renesas Technology Corp.

Rev.2.00 Sep 07, 2005 page 1 of 6

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